[PDF.08od] Medium-Range Order in Amorphous Silicon Measured by Fluctuation Electron Microscopy: Final Report

Medium-Range Order in Amorphous Silicon Measured by Fluctuation Electron Microscopy: Final Report

[PDF.df19] Medium-Range Order in Amorphous Silicon Measured by Fluctuation Electron Microscopy: Final Report

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 |  2012-07-20 | Original language:English | PDF # 1 |  9.69 x.8 x7.44l,.20 | File type: PDF | 40 pages

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Despite occasional experimental hints, medium-range structural order in covalently bonded amorphous semiconductors had largely escaped detection until the advent of fluctuation electron microscopy (FEM) in 1996. Using FEM, we find that every sample of amorphous silicon and germanium we have investigated, regardless of deposition method or hydrogen content, is rich in medium-range order. The paracrystalline structural model, which consists of small, topologically ordered ...

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